Title :
The HCI effect reliability evaluation of CMOS process
Author :
Zhang XiaoWen ; En YunFei
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., CEPREI, Guangzhou, China
Abstract :
Hot Carrier Injection (HCI) effect in the device of CMOS process has been studied, and the mechanism of HCI effect has been analyzed. In the Accelerated stress conditions, the accelerated life test of HCI effect has been conducted, and the reliability of 0.35μm~0.13μm CMOS process has been evaluated by the calculation of lifetime. The results show that the lifetime of HCI effect is not the same in different process node. The lifetimes of HCI effect in three different aspect ratio devices fabricated in 0.13μm CMOS process indicate that there is no relation between the aspect ratio of device and the lifetime of HCI effect.
Keywords :
CMOS integrated circuits; hot carriers; integrated circuit reliability; integrated circuit testing; life testing; stress effects; CMOS process; HCI effect reliability evaluation; accelerated life test; accelerated stress conditions; hot carrier injection effect; process node; size 0.35 mum to 0.13 mum; CMOS integrated circuits; CMOS process; DH-HEMTs; Reliability; Reliability; eEvaluation; hot carrier injection;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061218
