• DocumentCode
    3578143
  • Title

    Negative differential resistance effect in ITO/TiO2/ITO based RRAM sandwich structures

  • Author

    Peijian Zhang ; Guangbing Chen ; Yong Liu ; Gangyi Hu ; Zhaohuan Tang ; Guohua Shui ; Wensuo Chen ; Yang Meng ; Xinyu Pan ; Hongwu Zhao

  • Author_Institution
    Nat. Lab. of Analog Integrated Circuits, Chongqing, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    ITO/TiO2/ITO based RRAM sandwich structures exhibited both large current-voltage hysteresis loop and voltage controlled negative differential resistance effects at room temperature. Resistance switching process was well interpreted and simulated using ion migration related filament model. We believed that the differential resistance effect originated from the combination results from the Joule heating and phase change or atomic rearrangement.
  • Keywords
    indium compounds; negative resistance; resistive RAM; tin compounds; titanium compounds; ITO-TiO2-ITO; Joule heating; RRAM sandwich structures; current-voltage hysteresis loop; ion migration; resistance switching process; voltage controlled negative differential resistance; Heating; Indium tin oxide; Metals; Switches; Voltage control; Joule heating; differential resistance; ion migration; resistance switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061219
  • Filename
    7061219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578143