Influence of AlGaN barrier layer on the RF electric characteristics for W-Band AlGaN/GaN HEMTs

W-Band High Electron Mobility Transistors (HEMTs) with 100nm gate length were fabricated on the AlGaN/GaN heterostuctures with 22 nm and 18 nm AlGaN barrier layer, respectively. Due to the suppressed short-channel effect, the DC and RF characteristics of AlGaN/GaN HEMT with 18 nm barrier layer are much better than the ones with 22 nm barrier layer. The conclusion can be drown that once the ratio of gate length to the barrier layer thickness is smaller than 5:1, the short-channel effect affects the electric characteristics of W-Band AlGaN/GaN HEMTs obviously.