Title :
Mitigation of soft errors in resistive switching random-access-memories
Author :
Jinshun Bi ; Zhengsheng Han
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
The single-event-effect (SEE) response of 1T1R resistive switching random-access-memories (RRAMs) is examined. Two-photon-absorption laser experiments and simulation results indicate that soft errors can occur in RRAMs due to energetic particles striking the access transistor. Bit upset only occurs when the RRAM is in its high resistance state. An optimized 2T1R RRAM structure is proposed as an effective mitigation technique for soft errors. Advantages and disadvantages of the proposed method are estimated.
Keywords :
radiation hardening (electronics); resistive RAM; 1T1R resistive switching random-access-memory; 2T1R RRAM structure; SEE response; single-event-effect response; soft error mitigation; two-photon-absorption laser experiment; Bismuth; Electrodes; Immune system; Microelectronics; Switches; Testing; Transistors; RRAM; resistive switching; single-event-effect; soft errors;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061253
