Study of doping effects on Ta2O5−x/ TaOy based bilayer RRAM devices

Author

Kun Wang ; Huaqiang Wu ; Xinyuan Wang ; Xinyi Li ; He Qian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

Doping effects of Al, Si, P, and S on the key resistive switching performances for Ta₂O_5-x/TaO_y based bilayer RRAM devices were studied systematically. Forming voltages were reduced by Si, P, and S dopants. Uniformity of ON/OFF resistance and operational voltages for the doped devices was improved. P doped devices exhibit the best resistive switching performances including forming voltage uniformity, operational voltages and ON/OFF resistance distribution. This paper gives the glance of dopants selection guidelines for the Ta oxide based RRAM devices.

Keywords

aluminium; phosphorus; resistive RAM; semiconductor doping; silicon; sulphur; tantalum compounds; Ta₂O_5-x-TaO_y:Al-Si-P-S; bilayer RRAM devices; dopant selection guidelines; doped devices; doping effect study; forming voltage reduction; forming voltage uniformity; on-off resistance distribution; operational voltages; resistive switching performance; Annealing; Guidelines; ISO standards; Performance evaluation; Radio frequency; Switches; RRAM; doping effects; tantalum oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061254

Filename

7061254