A 26.3 dBm 2.5 to 6 GHz wideband class-D switched-capacitor power amplifier with 40% peak PAE

Author

Xing-Qiang Peng ; Wei-Han, Yu. ; Pui-In Mak ; Martins, Rui P.

Author_Institution

State Key Lab. of Analog & Mixed-Signal VLSI & FST ECE, Univ. of Macau, Macao, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

This paper describes a wideband class-D RF power amplifier (PA) featuring switched-capacitor (SC) modulation, a high-order LC-matching network (MN) and a reliability-aware supply-voltage boosting technique. Simulated in 65-nm CMOS at an elevated 3.2-V supply, the rms voltage stressed on each device is managed to be well within the reliability limits. The broadband coverage is from 2.5 to 6 GHz with peak power-added efficiency (PAE) of 40% at 26.4 dBm output power. After digital predistortion, the EVM is controlled <;6.8% under the 16-QAM modulated test signals.

Keywords

CMOS integrated circuits; LC circuits; MMIC power amplifiers; UHF power amplifiers; integrated circuit design; integrated circuit reliability; quadrature amplitude modulation; switched capacitor networks; wideband amplifiers; 16-QAM modulated test signal; CMOS technology; EVM; MN; PA; PAE; SC modulation; digital predistortion; efficiency 40 percent; frequency 2.5 GHz to 6 GHz; high-order LC-matching network; power-added efficiency; reliability; reliability-aware supply-voltage boosting technique; size 65 nm; voltage 3.2 V; voltage stress; wideband class-D switched-capacitor RF power amplifier; Manganese; Modulation; Power amplifiers; Power generation; Reliability; Switches; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061257

Filename

7061257