Title :
Ge channel MOSFETs directly on silicon
Author :
Che Wei Chen ; Cheng-Ting Chung ; Chao Hsin Chien
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <;10-7 A/cm2. Trigate PFET depicts a driving current of 22 μA/μm at VG = -2 V and a low OFF-current of 3 nA/μm at VG = 2 V. Junctionless trigate PFET shows ION/IOFF ratio of ~6×104 (ID), ~6×105 (IS), and the remarkably low off-current of 450 pA/μm at VD = -0.1 V. Strained trigate Ge NFET is demonstrated.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; germanium; Ge-Si; driving current; germanium channel MOSFET; high-performance germanium-silicon diode; junctionless trigate PFET; junctionless trigate germanium PFET; leakage current; low-OFF-current; silicon wafer; strained trigate germanium NFET; voltage 0.1 V; voltage 2 V; Artificial intelligence; Gallium arsenide; Lattices; Silicon; diode; germanium; junctionless; trigate;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061261
