Title :
Characterization of thermal stability of NiPt germanosilicide films by C+ pre-implantation
Author :
Mao, S.J. ; Wang, G.L. ; Yin, H.Z.
Author_Institution :
Integrated Circuit Adv. Process Center, Inst. of Microelectron., Beijing, China
Abstract :
The thermal stability of the NiPt germanosilicide films formed on the C+ implanted SiGe epitaxial layers has been characterized. It is found that the presence of C atoms can effectively improve the Ni(Pt)SiGe stability, the sheet resistance maintaining at ~30Ω between 400°C and 750°C. Moreover, both the surface and interface of Ni(Pt)SiGe films are remarkably enhanced.
Keywords :
Ge-Si alloys; carbon; ion implantation; metallic epitaxial layers; nickel alloys; platinum alloys; thermal stability; C+; NiPtSiGe; epitaxial layers; germanosilicide films; preimplantation; sheet resistance; temperature 400 degC to 750 degC; thermal stability; Annealing; Atomic layer deposition; Epitaxial growth; Lead; MOSFET circuits; X-ray scattering; Ni(Pt)SiGe; carbon; thermal stability;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061262
