Title :
A novel mixed-voltage I/O buffer with low-voltage thin-oxide CMOS transistors
Author :
Haibing Guo ; Yuan Wang ; Song Jia ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
A novel mixed-voltage I/O buffer only used thin gate-oxide transistors is presented in this paper. This new design can successfully avoid the undesired leakage current paths and the gate-oxide reliability that occur in the conventional mixed-voltage CMOS I/O buffers. With the use of a bootstrapped circuit to increase the gate voltage of the related NMOS devices, the power supply voltage could be transmitted entirely without threshold-voltage loss.
Keywords :
CMOS integrated circuits; MOSFET; bootstrap circuits; buffer circuits; integrated circuit design; integrated circuit reliability; leakage currents; NMOS devices; bootstrapped circuit; gate-oxide reliability; leakage current; low-voltage thin-oxide CMOS transistors; mixed-voltage I/O buffer; thin gate-oxide transistors; CMOS integrated circuits; Logic gates; MOS devices; Reliability; Transistors; Leakage current paths; bootstrapped circuit; gate-oxide reliability; mixe-voltage buffer;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061268
