DocumentCode
3578193
Title
The design of interface ASIC based on ring Schottky diode for MEMS gyroscope
Author
Shen, G.C. ; Lu, W.G. ; Liu, M.X. ; Li, X.L. ; Hu, J.R. ; Wu, F. ; Zhang, Y.C. ; Chen, Z.J.
Author_Institution
Dept. of Microelectron., Peking Univ., Beijing, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
This paper describes the interface ASIC based on ring Schottky diode and TIA for MEMS gyroscope. The basic structure of interface ASIC is analyzed theoretically. 2MHz carrier is used to exert the mass and modulates the vibrational signal of MEMS gyroscope. This can amplify vibration signal by the frequency of carrier. The circuit is implemented in 0.18μm CMOS process and its size is 1.5×2.3mm2.
Keywords
CMOS integrated circuits; Schottky diodes; application specific integrated circuits; gyroscopes; integrated circuit design; microsensors; vibration measurement; ASIC interface; CMOS process; MEMS gyroscope; TIA; frequency 2 MHz; ring Schottky diode; size 0.18 mum; vibrational signal modulation; CMOS integrated circuits; Gyroscopes; MEMS gyroscope; TIA; interface ASIC; ring Schottky diode;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061269
Filename
7061269
Link To Document