• DocumentCode
    3578193
  • Title

    The design of interface ASIC based on ring Schottky diode for MEMS gyroscope

  • Author

    Shen, G.C. ; Lu, W.G. ; Liu, M.X. ; Li, X.L. ; Hu, J.R. ; Wu, F. ; Zhang, Y.C. ; Chen, Z.J.

  • Author_Institution
    Dept. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper describes the interface ASIC based on ring Schottky diode and TIA for MEMS gyroscope. The basic structure of interface ASIC is analyzed theoretically. 2MHz carrier is used to exert the mass and modulates the vibrational signal of MEMS gyroscope. This can amplify vibration signal by the frequency of carrier. The circuit is implemented in 0.18μm CMOS process and its size is 1.5×2.3mm2.
  • Keywords
    CMOS integrated circuits; Schottky diodes; application specific integrated circuits; gyroscopes; integrated circuit design; microsensors; vibration measurement; ASIC interface; CMOS process; MEMS gyroscope; TIA; frequency 2 MHz; ring Schottky diode; size 0.18 mum; vibrational signal modulation; CMOS integrated circuits; Gyroscopes; MEMS gyroscope; TIA; interface ASIC; ring Schottky diode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061269
  • Filename
    7061269