Title :
Fabrication and characterization of carbon nanotube interconnect vias for next-generation technology nodes
Author :
Changjian Zhou ; Vyas, Anshul ; Wang, Phillip ; Mansun Chan ; Yang, Cary Y.
Author_Institution :
Dept. of Electron. & Comput. Eng., HKUST, Kowloon, China
Abstract :
We report the electrical characteristics of carbon nanotube (CNT) vias of diameters down to 30 nm for potential application as on-chip interconnects. A CNT packing or areal density of 1.2×1011/cm2 inside a via has been obtained. The measured resistances of the CNT vias are used to project via resistances in sub-30 nm technology nodes.
Keywords :
carbon nanotubes; integrated circuit interconnections; integrated circuit manufacture; vias; CNT packing; CNT vias; areal density; carbon nanotube interconnect vias; electrical characteristics; next-generation technology nodes; on-chip interconnects; Distance measurement; Robustness; Silicon; Carbon nanotube; interconnect; sub-30 nm technology nodes; via;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061272
