• DocumentCode
    3578196
  • Title

    Fabrication and characterization of carbon nanotube interconnect vias for next-generation technology nodes

  • Author

    Changjian Zhou ; Vyas, Anshul ; Wang, Phillip ; Mansun Chan ; Yang, Cary Y.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., HKUST, Kowloon, China
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the electrical characteristics of carbon nanotube (CNT) vias of diameters down to 30 nm for potential application as on-chip interconnects. A CNT packing or areal density of 1.2×1011/cm2 inside a via has been obtained. The measured resistances of the CNT vias are used to project via resistances in sub-30 nm technology nodes.
  • Keywords
    carbon nanotubes; integrated circuit interconnections; integrated circuit manufacture; vias; CNT packing; CNT vias; areal density; carbon nanotube interconnect vias; electrical characteristics; next-generation technology nodes; on-chip interconnects; Distance measurement; Robustness; Silicon; Carbon nanotube; interconnect; sub-30 nm technology nodes; via;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061272
  • Filename
    7061272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578196