Monolithically integrated E/D mode MIS GaN HEMTs and inverters on Si substrate

Author

Cen Kong ; Jianjun Zhou ; Yuechan Kong ; Jinyu Ni ; Tangsheng Chen

Author_Institution

Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

E/D mode GaN HEMTs and DCFL-based inverter were monolithically fabricated on Si-based GaN material. Selective barrier thinning method and MIS structure were used to realize GaN E/D mode HEMTs integration. E/D mode GaN HEMTs with threshold voltage of 2.6 V and 7 V were obtained respectively. DCFL-based inverter with high state noise margin of 0.95V and low state noise margin of 0.63V was also obtained on the same chip. The results indicate the promising to realize GaN E/D mode digital circuits with high performance and low cost on Si-based GaN material.

Keywords

III-V semiconductors; MIS structures; digital circuits; elemental semiconductors; gallium compounds; high electron mobility transistors; invertors; silicon; wide band gap semiconductors; DCFL-based inverter; GaN; MIS structure; Si; digital circuits; monolithically integrated E/D mode MIS HEMT; selective barrier thinning method; threshold voltage; voltage 0.63 V; voltage 0.95 V; voltage 2.6 V; voltage 7 V; Annealing; Gallium nitride; HEMTs; Heterojunctions; Inverters; MODFETs; Materials; Enhancement/Depletion mode GaN HEMTs; Si-based GaN; integration; inverter;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061276

Filename

7061276