Title :
Towards temperature-stable level shifters
Author :
Yi Huang ; Fanpeng Kong ; Najafizadeh, Laleh
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
A family of temperature stable level shifter circuits, covering a wide range of voltage level shifts, is presented in this paper. Design analysis is provided for both shift-up and shift-down circuits. Circuits are designed in 0.13 μm BiCMOS technology, and simulation results are presented.
Keywords :
BiCMOS integrated circuits; integrated circuit design; BiCMOS technology; design analysis; shift-down circuits; shift-up circuits; size 0.13 mum; temperature-stable level shifter circuits; voltage level shifts; BiCMOS integrated circuits; Generators; MOS devices; Switching circuits; BiCMOS; Lever Shifters; Temperature Stability;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061283
