• DocumentCode
    3578207
  • Title

    Towards temperature-stable level shifters

  • Author

    Yi Huang ; Fanpeng Kong ; Najafizadeh, Laleh

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A family of temperature stable level shifter circuits, covering a wide range of voltage level shifts, is presented in this paper. Design analysis is provided for both shift-up and shift-down circuits. Circuits are designed in 0.13 μm BiCMOS technology, and simulation results are presented.
  • Keywords
    BiCMOS integrated circuits; integrated circuit design; BiCMOS technology; design analysis; shift-down circuits; shift-up circuits; size 0.13 mum; temperature-stable level shifter circuits; voltage level shifts; BiCMOS integrated circuits; Generators; MOS devices; Switching circuits; BiCMOS; Lever Shifters; Temperature Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061283
  • Filename
    7061283
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578207