Inx Ga1−x As materials for post CMOS application: Materials and device aspects

High mobility In_xGa_1-xAs material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, In_xGa_1-xAs material based MOS capacitors will be studied for possible applications for future III-V MOSFET, TFET and FINFET devices. To improve the gate leakage of the In_xGa_1-xAs MOSCAP, the combination of wet chemical treatment and in-situ trimethyl aluminum (TMA) pretreatment was found to be the most effective method for In_xGa_1-xAs surface cleaning to achieve a fully inverted In_xGa_1-xAs MOSCAP for post CMOS digital applications. In addition, a high-k composite oxide composed of La₂O₃ and HfO₂ is investigated for In_xGa_1-xAs metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La₂O₃(0.8 nm)/ HfO₂(0.8 nm) on In_xGa_1-xAs with post deposition annealing at 500 °C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D_it) of 7.0 × 10¹¹ cm^-2eV^-1, small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.