Capacitance-Voltage characteristics of InxGa1−xAs Surface Channel Quantum Well MOSFET: Impact of doping concentration & dielectric material

Author

Rahman, Ehsanur ; Shadman, Abir ; Biswas, Sudipta Romen ; Datta, Kanak ; Khosru, Quazi D. M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2014

Firstpage

1

Lastpage

2

Abstract

In this paper, the Capacitance-Voltage (C-V) characteristics of high-k stack, arsenide based surface channel Quantum Well MOSFET were investigated. Self-consistent simulation was done by solving coupled Schrödinger-Poisson equation taking wave function penetration into oxide. Experimental C-V and a simulated band diagram of the Surface Channel Quantum Well MOSFET are available in recent literature. However, a self consistent simulation of C-V characterization is yet to be done. We studied the variation of C-V characteristics with some important parameters like oxide material, doping concentration in this work.

Keywords

III-V semiconductors; MOSFET; Poisson equation; Schrodinger equation; capacitance; gallium arsenide; high-k dielectric thin films; indium compounds; semiconductor doping; semiconductor quantum wells; wave functions; wide band gap semiconductors; In_xGa_1-xAs; Schrödinger-Poisson equation; capacitance-voltage characteristics; dielectric material; doping concentration; high-k stack; surface channel quantum well MOSFET; wave function penetration; Capacitance; Capacitance-voltage characteristics; Gold; Hafnium oxide; Logic gates; Quantum wells; Silicon; Gate capacitance; High-K stack; Quantum Well MOSFET; Self-consistent analysis; Surface channel;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061288

Filename

7061288