Title :
A 650 GHz four-anode GaAs monolithic integrated frequency tripler
Author :
Yiwei Han ; Bo Zhang ; Yong Fan
Author_Institution :
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
The analysis and design of a monolithic integrated frequency tripler in 650 GHz is discussed. The tripler utilizes a four-anodes planar Schottky varactor diode and fabricated on a 5-um GaAs substrate. The Monolithic integration technology will greatly reduce the assembling error and provide a best performance of output power, efficiency and bandwidth. According to the simulation results, the tripler´s output power is over 1mW in 634GHz~656GHz band. The peak value is 2.25mW at 650GHz with a conversion efficiency of 9%.
Keywords :
Schottky diodes; frequency multipliers; gallium arsenide; microwave integrated circuits; monolithic integrated circuits; GaAs; bandwidth 634 GHz to 656 GHz; four-anodes planar Schottky varactor diode; frequency 650 GHz; monolithic integrated frequency tripler; power 2.25 mW; size 5 mum; Epitaxial layers; Gallium arsenide; Power generation; Power harmonic filters; Schottky diodes; Simulation; Substrates; Schottky diodes; frequency tripler; monolithic integrated circuit;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061289
