DocumentCode
3578375
Title
A large signal SDD model for InP DHBT
Author
Oupeng Li ; Wei Cheng ; Lei Wang ; Haiyan Lu ; Ruimin Xu
Author_Institution
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2014
Firstpage
183
Lastpage
185
Abstract
In this paper, a accuracy large-signal model based on agilentHBT model for InP dou-ble heterojunction bipolar transistors (DHBTs) is implemented as symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC and multi-bias small S parameters for InP DHBTs.
Keywords
III-V semiconductors; S-parameters; heterojunction bipolar transistors; indium compounds; semiconductor device models; Agilent ADS; DHBT; InP; Kirk effect; S parameters; base collector capacitance; collector transit time; double heterojunction bipolar transistors; large signal SDD model; soft knee effect; symbolically defined device; DH-HEMTs; Equations; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; Junctions; Mathematical model;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN
978-1-4799-4246-6
Type
conf
DOI
10.1109/ICCPS.2014.7062248
Filename
7062248
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