Title :
A 110GHz GaAs MHEMT LNA MMIC
Author :
Zhang Jian ; Wang Lei ; Wang Wei-bo ; Cheng Wei ; Kang Yao-hui ; Lu Hai-yan ; Li Ou-peng ; Gu Guo-hua ; Wang Zhi-gang ; Xu Rui-min
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper presents the development of 110GHz monolithic low-noise amplifier (LNA) using 100 nm In0.52Al0.48As/In0.53Ga0.47As GaAs metamorphic high electron mobility transistors (MHEMTs) technology. The MHEMT technology features an extrinsic fT of 220GHz and an extrinsic transconduction gm,max of 940mS/mm. The LNA is consisted by 4 stages 2×20um gate width transistors. The amplifier demonstrates a gain of 17.7dB at 110GHz with a noise figure of 4.3dB when biased for high gain, and a noise figure of 3.6dB is achieved with an associated gain of 16.6dB at 110GHz when biased for low-noise figure. The chip area is 2.7mm×1.4mm.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; InAlAs; InGaAs; MHEMT LNA MMIC; frequency 110 GHz; frequency 220 GHz; gain 16.6 dB; gain 17.7 dB; metamorphic high electron mobility transistors technology; monolithic low-noise amplifier; noise figure 3.6 dB; noise figure 4.3 dB; size 100 nm; Gallium arsenide; Indium phosphide; Logic gates; MMICs; Noise figure; mHEMTs;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062250
