Constructing the Lagrangian of VLSI devices from near field measurements of the electric and magnetic fields

Author

Slattery, Kevin P. ; Muccioli, James P. ; North, Terry M.

Author_Institution

Intel Corp., Hillsboro, OR, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

129

Abstract

This paper describes a method whereby the Lagrangians of a set of near field measurements, over the surfaces of VLSI devices, are constructed. By studying the Lagrangian of a VLSI device, and applying least action principles, one is able to determine packaging effects over a broad frequency range and make a decision as to which package type is better in terms of its electromagnetic compatibility

Keywords

VLSI; capacitance; electric field measurement; electromagnetic compatibility; impedance matrix; integrated circuit layout; integrated circuit measurement; integrated circuit packaging; magnetic field measurement; EMC; IC layout; Lagrangian construction; VLSI devices; characteristic capacitance matrix; characteristic inductance matrix; electric fields; electromagnetic compatibility; frequency range; kinetic energy; least action principles; magnetic fields; near field measurements; packaging effects; potential energy; Chip scale packaging; Electric variables measurement; Electromagnetic compatibility; Electronics packaging; Frequency; Kinetic theory; Lagrangian functions; Magnetic devices; Magnetic field measurement; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2000. IEEE International Symposium on

Conference_Location

Washington, DC

Print_ISBN

0-7803-5677-2

Type

conf

DOI

10.1109/ISEMC.2000.875550

Filename

875550