DocumentCode :
3578391
Title :
Research on a 0°∼360° FET analog phase shifter of x-band
Author :
Huiyu Li ; MeiYing Wei ; Guang Hua ; Wei Li
Author_Institution :
Radio Monitoring Div., State Radio Monitoring Center, Beijing, China
fYear :
2014
Firstpage :
246
Lastpage :
249
Abstract :
In this paper, the design of the 0°~360° FET analog phase shifter is presented. By changing the gate voltages of the FET transistors, the output amplitudes of the four orthometric vector signals of the phase shifter can be independently adjusted. In this way, any phase shift over the range of 0° to 360° can be achieved. Due to the amplification characteristic of the FET transistors, the designed phase shifter has a gain rather than insertion loss. The gate voltages of the FETs are controlled by a microcontroller. Within the bandwidth of 400MHz (9.8GHz~10.2GHz), the designed and fabricated 0°~360° phase shifter´s input and output VSWRs are less than 2:1, the phase error is less then ±3°, and the in-band gain is about 7±0.5dB.
Keywords :
HEMT circuits; high electron mobility transistors; microwave field effect transistors; microwave phase shifters; FET analog phase shifter; X-band phase shifter; amplification characteristic; bandwidth 400 MHz; frequency 9.8 GHz to 10.2 GHz; microcontroller; orthometric vector signals; Broadband antennas; Field effect transistors; Logic gates; Phase shifters; Vectors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
Type :
conf
DOI :
10.1109/ICCPS.2014.7062264
Filename :
7062264
Link To Document :
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