Title :
Design of a S-band low noise amplifier
Author :
Chao Sun ; Haoquan Hu ; Qianyun Pang
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper presents the design of A S-band low noise amplifier (LNA), which is made up of two stages with Agilent´s ATF-54143. The biasing circuit, input stage, middle stage and output stage matching circuits of the LNA are designed and simulated by the software Agilent ADS. At last, the designed circuit is fabricated and measured. It is showed that, from 2.15GHz to 2.65GHz, the gain is between 27.2dB and 28.1dB, whose gain variation is less than ±0.9dB, noise figure is less than 1dB, input voltage standing wave ratio (VSWR) and output VSWR are 1.048-1.640 and 1.120-1.840 respectively. In the center frequency, the output 1 dB compression point is 16.2dBm.
Keywords :
integrated circuit design; low noise amplifiers; Agilent ATF-54143; LNA; S-band low noise amplifier; VSWR; frequency 2.15 GHz to 2.65 GHz; gain 27.2 dB; gain 28.1 dB; matching circuits; software Agilent ADS; voltage standing wave ratio; Gain; Low-noise amplifiers; Noise; Noise figure; Semiconductor device measurement; Stability analysis; Agilent´s ADS; Low Noise Amplifier; S-band; two stages;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062267
