DocumentCode
3578424
Title
Broadband class E GaN power amplifier design in S band with low-pass match
Author
Chuicai Rong ; Yuehang Xu ; Mingyao Xia ; Yujie Luo ; Rongde Ou
Author_Institution
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2014
Firstpage
372
Lastpage
375
Abstract
A high efficient broadband GaN HEMT power amplifier with low-pass match networks is presented for use from 2.7 to 3.7 GHz. A low-pass filter-matching is designed for the output match and input match, which provides optimized fundamental and harmonic impedances. The amplifier delivers 38.3 dBm output power, with a power-added efficiency of 70-74% and a gain of 11-15 dB throughout the band.
Keywords
HEMT circuits; III-V semiconductors; UHF amplifiers; gallium compounds; microwave amplifiers; power amplifiers; GaN; HEMT power amplifier; S-band power amplifier; broadband class-E power amplifier; frequency 2.7 GHz to 3.7 GHz; low-pass filter matching; low-pass matching network; Broadband amplifiers; Gallium nitride; HEMTs; Harmonic analysis; Power amplifiers; Power generation; GaN; broadband; class E; high efficiency; low-pass match;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN
978-1-4799-4246-6
Type
conf
DOI
10.1109/ICCPS.2014.7062297
Filename
7062297
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