Title :
Broadband class E GaN power amplifier design in S band with low-pass match
Author :
Chuicai Rong ; Yuehang Xu ; Mingyao Xia ; Yujie Luo ; Rongde Ou
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A high efficient broadband GaN HEMT power amplifier with low-pass match networks is presented for use from 2.7 to 3.7 GHz. A low-pass filter-matching is designed for the output match and input match, which provides optimized fundamental and harmonic impedances. The amplifier delivers 38.3 dBm output power, with a power-added efficiency of 70-74% and a gain of 11-15 dB throughout the band.
Keywords :
HEMT circuits; III-V semiconductors; UHF amplifiers; gallium compounds; microwave amplifiers; power amplifiers; GaN; HEMT power amplifier; S-band power amplifier; broadband class-E power amplifier; frequency 2.7 GHz to 3.7 GHz; low-pass filter matching; low-pass matching network; Broadband amplifiers; Gallium nitride; HEMTs; Harmonic analysis; Power amplifiers; Power generation; GaN; broadband; class E; high efficiency; low-pass match;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062297
