Title :
A broadband, low power, variable-gain power amplifier based on 0.13-µm CMOS technology
Author :
Liwei Zhai ; Fengyi Huang ; Youming Zhang
Author_Institution :
Nat. Mobile Commun. Res. Lab., Southeast Univ., Nanjing, China
Abstract :
A 6.336-6.864GHz power amplifier for band 7 of ultra-wideband(UWB) is presented in this paper, which consists of a differential cascode output stage and a gain-tuning stage by changing bias voltage. Implemented in 0.13-μm CMOS technology, the power amplifier has a gain range of -14-1dB, output 1-dB compression point of +1dBm and output third order intercept point(OIP3) of +11dBm. Simulation results also show that the output return loss (S22) is -17dB and the isolation (S12) is -45 dB at input frequency of 6.6 GHz. The power amplifier has a low power consumption of only 16.8mW from 1.2V supply voltage. The die area is 0.68×0.68 mm2.
Keywords :
CMOS integrated circuits; low-power electronics; power amplifiers; CMOS technology; broadband power amplifier; differential cascode output stage; frequency 6.336 GHz to 6.864 GHz; frequency 6.6 GHz; gain -14 dB to 1 dB; gain-tuning stage; low power amplifier; output third order intercept point; power 16.8 mW; size 0.13 mum; variable-gain power amplifier; voltage 1.2 V; Bandwidth; CMOS integrated circuits; CMOS technology; Gain; Layout; Linearity; Power generation;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062326
