A double-balanced down converter mixer in GaN-on-Si HEMT technology

Author

Shuai Liu ; Jun Xu ; Bo Zhang ; Zhitao Xu

Author_Institution

Sch. of Phys. Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

Firstpage

550

Lastpage

552

Abstract

A 2-5 GHz MMIC double-balanced Gilbert mixer (DBGM) with a lumped-elements LO balun and IF buffer has been designed, fabricated in GaN-on-Si HEMT MMIC technology and characterized with on-board measurements. This proposed mixer uses on-chip capacitively coupled resonating elements to isolate the dc currents of RF and LO route, which could help to realize low voltage and improve the noise figure (NF). Compared with other conventional baluns, the proposed lumped-element passive LO input balun can reduce chip size. The mixer demonstrates a 3 dB IF bandwidth from DC to 0.5 GHz and the maximum conversion gain (CG) of 9.3 dB at RF input of 3.5 GHz.

Keywords

III-V semiconductors; MMIC mixers; baluns; convertors; coupled circuits; elemental semiconductors; gallium compounds; high electron mobility transistors; microwave resonators; silicon; wide band gap semiconductors; DBGM; GaN-Si; HEMT technology; IF buffer; MMIC double-balanced Gilbert mixer; bandwidth 0.5 GHz; double-balanced down converter mixer; frequency 2 GHz to 5 GHz; gain 9.3 dB; lumped-elements LO balun; maximum conversion gain; noise figure; on-chip capacitively coupled resonating elements; Gain; Gallium nitride; HEMTs; Impedance matching; Mixers; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Problem-Solving (ICCP), 2014 IEEE International Conference on

Print_ISBN

978-1-4799-4246-6

Type

conf

DOI

10.1109/ICCPS.2014.7062343

Filename

7062343