Title :
An 18 to 40GHz double balanced MMIC mixer using GaAs technology
Author :
Manfei Yang ; Lei Wang
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper describes a broadband, doubled balanced diode ring mixer IC. The RF/LO frequency range is 18 to 40 GHz and the IF DC to 8 GHz. This chip is fabricated on the 0.15μm pHEMT GaAs process which is offered by WIN semiconductor. The modified Marchand balun is used to provide the differential signals for the mixer. The chip successfully get a conversion loss less than 12dB and decent LO to IF isolation of nearly over 20dB. The mixer´s size is around 1.10mm×0.75mm.
Keywords :
III-V semiconductors; MMIC mixers; baluns; gallium arsenide; isolation technology; losses; millimetre wave mixers; power HEMT; semiconductor diodes; GaAs; IF DC; IF isolation; Marchand balun modification; RF-LO frequency range; WIN semiconductor; broadband doubled balanced diode ring mixer IC; chip fabrication; conversion loss; double balanced MMIC mixer; frequency 18 GHz to 40 GHz; frequency 8 GHz; pHEMT process; size 0.15 mum; Gallium arsenide; Impedance matching; Loss measurement; MMICs; Mixers; Radio frequency; Semiconductor diodes; Marchand balun; doubled balanced mixer; monolithic microwave integrated circuit (MMIC);
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062345
