An 18 to 40GHz double balanced MMIC mixer using GaAs technology

Author

Manfei Yang ; Lei Wang

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

Firstpage

556

Lastpage

559

Abstract

This paper describes a broadband, doubled balanced diode ring mixer IC. The RF/LO frequency range is 18 to 40 GHz and the IF DC to 8 GHz. This chip is fabricated on the 0.15μm pHEMT GaAs process which is offered by WIN semiconductor. The modified Marchand balun is used to provide the differential signals for the mixer. The chip successfully get a conversion loss less than 12dB and decent LO to IF isolation of nearly over 20dB. The mixer´s size is around 1.10mm×0.75mm.

Keywords

III-V semiconductors; MMIC mixers; baluns; gallium arsenide; isolation technology; losses; millimetre wave mixers; power HEMT; semiconductor diodes; GaAs; IF DC; IF isolation; Marchand balun modification; RF-LO frequency range; WIN semiconductor; broadband doubled balanced diode ring mixer IC; chip fabrication; conversion loss; double balanced MMIC mixer; frequency 18 GHz to 40 GHz; frequency 8 GHz; pHEMT process; size 0.15 mum; Gallium arsenide; Impedance matching; Loss measurement; MMICs; Mixers; Radio frequency; Semiconductor diodes; Marchand balun; doubled balanced mixer; monolithic microwave integrated circuit (MMIC);

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Problem-Solving (ICCP), 2014 IEEE International Conference on

Print_ISBN

978-1-4799-4246-6

Type

conf

DOI

10.1109/ICCPS.2014.7062345

Filename

7062345