A new method of designing high efficiency and wideband power amplifier

Author

Xuekun Du ; Zhenhai Shao ; Changjiang You ; Di Jiang

Author_Institution

Sch. of Commun. & Inf. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

Firstpage

638

Lastpage

641

Abstract

This paper presents a new method to design high efficiency and wideband power amplifier (PA). Based on the output parasitics network of MOSFET, this method shifts the optimum load impedances from the intrinsic plane to the package plane, which are obtained by the continuous PA theory and then rectified elaborately by multi-harmonic bilateral-pull technology, in order to make the second harmonic load impedances in high efficient region as well as the fundamental load impedances with high power added efficiency (PAE) and output power. A simulated example based on the GaN HEMT device CGH40010F is designed to verify the proposed method.

Keywords

III-V semiconductors; MOSFET; electric impedance; gallium compounds; high electron mobility transistors; power amplifiers; wideband amplifiers; GaN; HEMT device; MOSFET; continuous PA theory; high efficiency power amplifier; multiharmonic bilateral-pull technology; optimum load impedance; output parasitics network; power added efficiency; second harmonic load impedance; wideband power amplifier; Harmonic analysis; Impedance; Impedance matching; Power amplifiers; Power generation; Power harmonic filters; Wideband; continuous PA; high efficiency; multi-harmonic bilateral-pull technology; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Problem-Solving (ICCP), 2014 IEEE International Conference on

Print_ISBN

978-1-4799-4246-6

Type

conf

DOI

10.1109/ICCPS.2014.7062365

Filename

7062365