Title :
A new method of designing high efficiency and wideband power amplifier
Author :
Xuekun Du ; Zhenhai Shao ; Changjiang You ; Di Jiang
Author_Institution :
Sch. of Commun. & Inf. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper presents a new method to design high efficiency and wideband power amplifier (PA). Based on the output parasitics network of MOSFET, this method shifts the optimum load impedances from the intrinsic plane to the package plane, which are obtained by the continuous PA theory and then rectified elaborately by multi-harmonic bilateral-pull technology, in order to make the second harmonic load impedances in high efficient region as well as the fundamental load impedances with high power added efficiency (PAE) and output power. A simulated example based on the GaN HEMT device CGH40010F is designed to verify the proposed method.
Keywords :
III-V semiconductors; MOSFET; electric impedance; gallium compounds; high electron mobility transistors; power amplifiers; wideband amplifiers; GaN; HEMT device; MOSFET; continuous PA theory; high efficiency power amplifier; multiharmonic bilateral-pull technology; optimum load impedance; output parasitics network; power added efficiency; second harmonic load impedance; wideband power amplifier; Harmonic analysis; Impedance; Impedance matching; Power amplifiers; Power generation; Power harmonic filters; Wideband; continuous PA; high efficiency; multi-harmonic bilateral-pull technology; wideband;
Conference_Titel :
Communication Problem-Solving (ICCP), 2014 IEEE International Conference on
Print_ISBN :
978-1-4799-4246-6
DOI :
10.1109/ICCPS.2014.7062365
