A micromachined 805 GHz rectangular waveguide filter on silicon wafers

Author

Dan Lei ; Shuang Liu ; Yong Zhang ; Jiang Hu ; Li Li ; Wei Zhao ; Ruimin Xu

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

Firstpage

653

Lastpage

655

Abstract

In this letter, a WR-1.0 rectangular waveguide band-pass filter is designed, which is fabricated using the deep reactive ion etching (DRIE) micromachining on silicon wafers. The filter consists of four inductive irises. Using Ansoft HFSS, the center frequency of the filter is at 805GHz and the insertion loss is about 1.5 dB within the 21GHz bandwidth. Effects of the DRIE process brought to the filter performance are also discussed.

Keywords

band-pass filters; micromachining; rectangular waveguides; submillimetre wave filters; waveguide filters; Ansoft HFSS; DRIE micromachining; DRIE process; WR-1.0 rectangular waveguide band-pass filter; bandwidth 21 GHz; deep reactive ion etching micromachining; filter center frequency; filter performance; frequency 805 GHz; inductive iris; insertion loss; micromachined rectangular waveguide filter; silicon wafers; Band-pass filters; Filtering theory; Micromachining; Rectangular waveguides; Resonator filters; Silicon; DRIE; WR-1.0; Waveguide band-pass filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Problem-Solving (ICCP), 2014 IEEE International Conference on

Print_ISBN

978-1-4799-4246-6

Type

conf

DOI

10.1109/ICCPS.2014.7062369

Filename

7062369