Modeling of graphene nanoribbon FET and analysis of its electrical properties

Graphene devices can be used to electromagnetic information field base on their peculiar electromagnetic properties. These devices, which have advantages in terms of small size, high switching speed, and high switching reliability, will be instead of the variable capacitances or mechanical contacts. In this paper, we present a modeling of graphene nanoribbon field-effect transistor, and a simulation of graphene devices in weak electrostatic fields, based on the self-consistent solution of Poisson and Schrödinger equations within the non-equilibrium Green´s function formalism and a tight-binding Hamiltonian. The simulation results analyze the electrical characteristics of GNR-FET with different structures.