Title :
Realization of a fully-integrated POF receiver with large-area photodetector in 0.5μm CMOS
Author :
Cheng-cheng Fan ; Xiang Cheng ; Huang-ping Yan ; Ming Zheng ; Pan Xu ; Xiao-feng Shi ; Chao Chen
Author_Institution :
Sch. of Phys. & Mech. & Electr. Eng., Xiamen Univ., Xiamen, China
Abstract :
In this paper, a structure model of Spatially Modulated(SM)photodetector(PD) is accomplished in SILVOC-A. Optical spectrum response and AC characteristic of photodetector are simulated on the model. Based on the simulation, large-area PD are chosen for the monolithic integration with a trans-impedance amplifier and a preamplifier. A proposed monolithic optoelectronic integrated receivers are fabricated in 0.5um CMOS technology for 650nm plastic optical fiber communication. The simulation results show the gain of receiver is 70dB and -3dB bandwidth of receiver is 158MHz. The measurements of the two receiver are implemented. The receiver achieves a sensitivity of -15dBm with the bit-error-rate of 10-9 at 155Mb/s pseudo random binary sequence signal for 650nm input light. A clear eye diagram is demonstrated for 155Mb/s square signal.
Keywords :
CMOS integrated circuits; integrated optoelectronics; optical receivers; photodetectors; CMOS integrated circuit; bit rate 155 Mbit/s; fully integrated POF receiver; large area photodetector; monolithic optoelectronic integrated receiver; optical spectrum response; plastic optical fiber communication; pseudorandom binary sequence signal; size 0.5 mum; spatially modulated photodetector; wavelength 650 nm; CMOS integrated circuits; CMOS technology; Detectors; Optical fibers; Optical receivers; Photodetectors; CMOS; Monolithic Optical Receiver; POF; SM PD;
Conference_Titel :
Anti-counterfeiting, Security, and Identification (ASID), 2014 International Conference on
Print_ISBN :
978-1-4799-7117-6
DOI :
10.1109/ICASID.2014.7064966
