Title :
Study of Quality Factor of Silicon Based NOT Logic Gate Using FDTD
Author :
Joseph, Gloria ; Kalyani, Vijaylaxmi
Author_Institution :
Electron. & Commun., Gov. Women Eng. & Technol., Ajmer, India
Abstract :
This paper presents a design of optical-NOT logic gate with air as a substrate and Silicon is used as the dielectric for rods fabricated with photonic crystal with dielectric constant of 11.49 and lattice constant of. 5943 and works at wavelength of 1700nm. The radius of rods is 0.2a produced on a wafer of size 12μm x 12μm. The behavior of this logic gate is studied by finite difference time domain method (FDTD) and photonic band gap is calculated by PWE method. The quality factor of our NOT logic gate is 1559.
Keywords :
Q-factor; elemental semiconductors; finite difference time-domain analysis; lattice constants; logic gates; optical logic; permittivity; photonic band gap; photonic crystals; rods (structures); silicon; FDTD; PWE method; Si; air substrate; dielectric constant; finite difference time domain method; lattice constant; optical-NOT logic gate; photonic band gap; photonic crystal; quality factor; silicon based NOT logic gate; silicon dielectric rods; wavelength 1700 nm; Logic gates; Nonlinear optics; Optical refraction; Optical ring resonators; Optical variables control; Photonic crystals; Silicon; Finite Difference Time Domain Method; Photonic Crystal; Photonic Crystal Ring Resonator; Plane Wave expansion;
Conference_Titel :
Computational Intelligence and Communication Networks (CICN), 2014 International Conference on
Print_ISBN :
978-1-4799-6928-9
DOI :
10.1109/CICN.2014.191
