Study of Quality Factor of Silicon Based NOT Logic Gate Using FDTD

Author

Joseph, Gloria ; Kalyani, Vijaylaxmi

Author_Institution

Electron. & Commun., Gov. Women Eng. & Technol., Ajmer, India

fYear

2014

Firstpage

909

Lastpage

912

Abstract

This paper presents a design of optical-NOT logic gate with air as a substrate and Silicon is used as the dielectric for rods fabricated with photonic crystal with dielectric constant of 11.49 and lattice constant of. 5943 and works at wavelength of 1700nm. The radius of rods is 0.2a produced on a wafer of size 12μm x 12μm. The behavior of this logic gate is studied by finite difference time domain method (FDTD) and photonic band gap is calculated by PWE method. The quality factor of our NOT logic gate is 1559.

Keywords

Q-factor; elemental semiconductors; finite difference time-domain analysis; lattice constants; logic gates; optical logic; permittivity; photonic band gap; photonic crystals; rods (structures); silicon; FDTD; PWE method; Si; air substrate; dielectric constant; finite difference time domain method; lattice constant; optical-NOT logic gate; photonic band gap; photonic crystal; quality factor; silicon based NOT logic gate; silicon dielectric rods; wavelength 1700 nm; Logic gates; Nonlinear optics; Optical refraction; Optical ring resonators; Optical variables control; Photonic crystals; Silicon; Finite Difference Time Domain Method; Photonic Crystal; Photonic Crystal Ring Resonator; Plane Wave expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Intelligence and Communication Networks (CICN), 2014 International Conference on

Print_ISBN

978-1-4799-6928-9

Type

conf

DOI

10.1109/CICN.2014.191

Filename

7065611