Computationally Comprehensive and Efficient Generalized Poisson´s Solution for Better Nanoscale SOI MOSFET

In this paper, for the first time, a computationally comprehensive and efficient generalized Poisson´s solution is derived for better nanoscale SOI MOSFET and performance is analyzed for various gate dielectric materials to optimise / predict the better performance. Earlier methods employed for solving the Poisson´s equation rigorously for independent gate transistors and long channel asymmetric establish in potential models. But those potential models contain multiple intercoupled implicit equations which are to be solved self-consistently thereby establishing that those models are clearly inefficient for compact modelling. In this work, a novel rigorous method for solving PE has been described to get the potential profile of a single gate SOI MOSFET that incorporates a single implicit equation. The Poisson´s solution so obtained in the present work is found to be computationally more efficient for related circuit simulation compared to earlier developed solutions.