DocumentCode :
358124
Title :
Effect of geometrical uniformity of microstructure to electrical characteristics of ZnO varistors
Author :
Tu, You-Ping ; Zeng, Rong ; He, Jin-Liang ; Han, Se-Won ; Cho, Han-Goo
Author_Institution :
Dept. of Electr. Eng., North China Electr. Eng. Univ., Beijing, China
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
737
Abstract :
The microstructure uniformity of ZnO varistors does not have a direct effect on the onset of the voltage upturn in the high current region. The obvious effect of improving the geometrical uniformity of ZnO varistors is to increase the global breakdown voltage and nonlinearity coefficient. Although the global breakdown voltage is directly related to the electrical characteristic uniformity of the microstructure, it is affected more easily by the breakdown path which is determined by the geometrical uniformity of microstructure. The smaller the average and standard deviation are, the more uniform the microstructure is and the better the global electrical characteristic
Keywords :
II-VI semiconductors; ceramics; crystal microstructure; semiconductor device breakdown; varistors; zinc compounds; ZnO; ZnO varistors; ZnO-Bi2O3-Sb2O3-Co 2O3-NiO-MnO2-Cr2O3 -Al2O3; breakdown path; electrical characteristics; geometrical uniformity; global breakdown voltage; high current region; microstructure uniformity; nonlinearity coefficient; voltage upturn onset; Additives; Breakdown voltage; Ceramics; Electric variables; Grain boundaries; Helium; Metals industry; Microstructure; Varistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5459-1
Type :
conf
DOI :
10.1109/ICPADM.2000.876180
Filename :
876180
Link To Document :
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