• DocumentCode
    3581739
  • Title

    A 20GHz low noise CMOS active baiun using asymmetric transformer

  • Author

    Tsutsumi, Koji ; Inagaki, Ryuji ; Nakai, Takayuki ; Takeuchi, Ryosuke ; Taniguchi, Eiji

  • Author_Institution
    Mitsubishi Electric Corporation, 5-1-1, Ofuna Kamakura, Kanagawa, 247-8501, Japan
  • fYear
    2014
  • Firstpage
    423
  • Lastpage
    425
  • Abstract
    A 20GHz-band low noise CMOS active balun is presented. The proposed circuit utilizes asymmetric transformer to CG-CS(Common Gate-Common Source) noise canceling active balun, in order to lower amplitude and phase errors in high frequency operation. Analysis with circuit simulation and measurement results verifies that the proposed circuit effectively reduce noise figure at 20GHz band while keeping differential output balance. The proposed circuit is fabricated in 0.13um CMOS process, and achieved noise figure of 7.2dB at 21GHz which is 2dB lower than active balun with symmetric transformer.
  • Keywords
    Gain; Impedance matching; Microwave FET integrated circuits; Microwave circuits; Microwave integrated circuits; Noise measurement; Baiuns; CMOS integrated circuit; Low-noise circuits; Transformers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2014 Asia-Pacific
  • Type

    conf

  • Filename
    7067748