DocumentCode
3581739
Title
A 20GHz low noise CMOS active baiun using asymmetric transformer
Author
Tsutsumi, Koji ; Inagaki, Ryuji ; Nakai, Takayuki ; Takeuchi, Ryosuke ; Taniguchi, Eiji
Author_Institution
Mitsubishi Electric Corporation, 5-1-1, Ofuna Kamakura, Kanagawa, 247-8501, Japan
fYear
2014
Firstpage
423
Lastpage
425
Abstract
A 20GHz-band low noise CMOS active balun is presented. The proposed circuit utilizes asymmetric transformer to CG-CS(Common Gate-Common Source) noise canceling active balun, in order to lower amplitude and phase errors in high frequency operation. Analysis with circuit simulation and measurement results verifies that the proposed circuit effectively reduce noise figure at 20GHz band while keeping differential output balance. The proposed circuit is fabricated in 0.13um CMOS process, and achieved noise figure of 7.2dB at 21GHz which is 2dB lower than active balun with symmetric transformer.
Keywords
Gain; Impedance matching; Microwave FET integrated circuits; Microwave circuits; Microwave integrated circuits; Noise measurement; Baiuns; CMOS integrated circuit; Low-noise circuits; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (APMC), 2014 Asia-Pacific
Type
conf
Filename
7067748
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