Title :
A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection
Author :
Kurniawan, Taufiq Alif ; Yang, Xin ; Sun, Zheng ; Xu, Xiao ; Yoshimasu, Toshihiko
Author_Institution :
Graduate School of Information, Production and Systems, Waseda University, Kitakyushu-city, Fukuoka, JAPAN
Abstract :
In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-µm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.
Keywords :
Abstracts; CMOS integrated circuits; Decision support systems; Power generation; Production; Sun; Back-gate voltage; class-E amplifier; high efficiency; low supply voltage;
Conference_Titel :
Microwave Conference (APMC), 2014 Asia-Pacific
