• DocumentCode
    3581985
  • Title

    Shunt characterization technique of decoupling transmission line for millimeter-wave CMOS amplifier design

  • Author

    Tokgoz, Korkut Kaan ; Lim, Kimsrun ; Okada, Kenichi ; Matsuzawa, Akira

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S3-27, Oookayama, Meguro-ku, 152-8552, Japan
  • fYear
    2014
  • Firstpage
    274
  • Lastpage
    276
  • Abstract
    A shunt characterization method is proposed to characterize a very low impedance transmission line (TL), which is used for decoupling of DC and RF in millimeter-wave CMOS circuits. Since metal-insulator-metal (MIM) capacitors are used to achieve very low impedance the TL named as MIM TL. Two structures are used for this method. S-parameters of MIM TL are calculated using reflections. The results match better than direct measurement method from 1 to 110 GHz.
  • Keywords
    Abstracts; Hafnium; Very large scale integration; CMOS; decoupling; device characterization; metal-insulator-metal; mm-wave; transmission line;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2014 Asia-Pacific
  • Type

    conf

  • Filename
    7067994
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3581985