DocumentCode
3582029
Title
Pure-play GaN foundry technology for RF applications
Author
Lin, Che-Kai ; Du, Jhih-Han ; Wang, Albert ; Peng, Sheng-Wen ; Chen, Chao-Hung ; Chen, Chai-Hao ; Chou, Tung-Yao ; Wang, Wei-Chou ; Wu, Jya-Shian ; Kuo, Richard ; Huang, Clement ; Cho, I-Te ; Wohlmuth, Walter ; Takatani, Shinichiro
Author_Institution
WIN Semiconductors Corp., No. 35, Technology 7th Rd., Hwaya Technology Park, Kuei Shan Hsiang, Tao Yuan Shien, 333, R.O.C.
fYear
2014
Firstpage
188
Lastpage
190
Abstract
This paper presents the development of a newly available GaN HEMT technology portfolio and focuses on fabrication, RF characterization, reliability performance and device modeling. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests. The GaN HEMT technologies enable power amplifier, low-noise amplifier, and RF switch products utilizing supply voltages of 28V and 50V and operational frequencies extending from IEEE standard L- to Ku-band.
Keywords
Gain; Gallium nitride; HEMTs; Logic gates; MMICs; Radio frequency; AlGaN/GaN; MMIC; MTTF; PA; T-gate; field-plate;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (APMC), 2014 Asia-Pacific
Type
conf
Filename
7068038
Link To Document