DocumentCode
3582041
Title
A high gain K-band LNA in GaAs 0.1-µm pHEMT for radio astronomy application
Author
Chen, Bo-Yu ; Chiong, Chau-Ching ; Wang, Huei
Author_Institution
Graduate Institute of Communication Engineering, National Taiwan University, Taiwan
fYear
2014
Firstpage
226
Lastpage
228
Abstract
In this paper, we present a K-band MMIC low noise amplifier (LNA) using 0.1-µm GaAs pseudomorphic high electron mobility transistor (pHEMT). The K-band LNA shows small signal gain of 29 dB from 18.5 to 30 GHz with dc power consumption 27 mW and demonstrates a measured noise figure of 2.1 dB from 20 to 33 GHz. The figure-of-merit (FOM) is 544 (GHz/mW).
Keywords
Decision support systems; Gain; Microwave FET integrated circuits; Microwave circuits; Microwave integrated circuits; Noise figure; HEMT; K-band; low-noise amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (APMC), 2014 Asia-Pacific
Type
conf
Filename
7068050
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