• DocumentCode
    3582042
  • Title

    A W-band 100 nm InP HEMT ultra low noise amplifier

  • Author

    Farkas, D.S. ; Sarkozy, S.J. ; Katz, R.

  • Author_Institution
    Active Wave Technology, Torrance, CA 90503 USA
  • fYear
    2014
  • Firstpage
    229
  • Lastpage
    231
  • Abstract
    In this paper, we demonstrate a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) that achieves an average gain of 30 dB and an average noise figure of 1.9 dB in W-band from 80 to 100 GHz. Within the 92 to 96 GHz frequency range, the LNA achieves an average noise figure of 1.75 dB. The LNA was designed using Northrop Grumman Corporation´s (NGC) qualified 100 nm InP HEMT technology. To our knowledge, this performance demonstrates the best noise figure performance in W-band for a qualified technology.
  • Keywords
    Abstracts; Decision support systems; Gain; Noise figure; Radio frequency; Silicon; InP HEMT; MMIC; W-band; low noise amplifier (LNA);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2014 Asia-Pacific
  • Type

    conf

  • Filename
    7068051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3582042