High performance charge plasma based multi zone lateral bipolar junction transistor

In this paper, we propose a new structure of a lateral bipolar junction transistor (LBJT) on silicon on insulator (SOI), employing multi zone collector drift region. The novelty of the device is the use of charge plasma concept to realize emitter, base and multi zone collector drift regions. Here metals of different work functions are used to realize these regions instead of conventional doping methods of diffusion and ion implantation. The numerical simulation of the proposed multi zone charge plasma LBJT (MZCP-LBJT) on SOI has been performed and the key characteristics have been compared with the conventionally doped LBJT (CD-LBJT) on SOI. A significant improvement in the ON current (ION), current gain, cutoff frequency (fT) and breakdown voltage has been observed in the proposed device. It has been observed that current gain increases by ~ 20 times and ION by 10 times in the proposed device. Further, by using an optimized gap between the collector and base regions, a 34% increase in fT is achieved in the proposed device. Furthermore, the proposed device does not face doping related issues and the requirement of high temperature processing is absent, as it uses charge plasma concept to realize different regions, instead of the conventional doping methods.