Performance evaluation of finFET based SRAM under statistical VT variability

Author

El-Thakeb, Ahmed T. ; Abd Elhamid, Hamdy ; Mostafa, Hassan ; Ismail, Yehea

Author_Institution

Center for Nano-Electron. & Devices, American Univ. in Cairo & Zewail City for Sci. & Technol., Cairo, Egypt

fYear

2014

Firstpage

88

Lastpage

91

Abstract

FinFET devices are the most promising solutions for further technology scaling in the long term projections of the ITRS. The performance of extremely scaled FinFET-based 256-bit (6T) SRAM is evaluated with technology scaling for channel lengths of 20nm down to 7nm showing the scaling trends of basic performance metrics. In addition, the impact of threshold voltage variations on the delay, power, and stability is reported considering die-to-die variations. Significant performance degradation is found starting from the 10nm channel length and continues down to 7nm.

Keywords

MOSFET; SRAM chips; performance evaluation; statistical analysis; FinFET device; ITRS; SRAM; die-to-die variation; performance evaluation; size 20 nm to 7 nm; stability; statistical VT variability; threshold voltage variation; word length 256 bit; Degradation; Delays; FinFETs; Random access memory; Sensitivity; Threshold voltage; Wireless sensor networks; 6T SRAM; Nano-scale FinFET; Technology scaling; threshold voltage variations;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2014 26th International Conference on

Type

conf

DOI

10.1109/ICM.2014.7071813

Filename

7071813