Title :
New UMTS multiband design for TX-leakage suppression in RF front-end transcievers
Author :
Wahba, Ahmed ; Khalaf, Yaser ; Farag, Fathi
Author_Institution :
Electron. & Commun. Dept. Fac. of Eng., Zagazig Univ., Zagazig, Egypt
Abstract :
A new design for active filtering technique, used to remove the transmitted leakage signal in frequency division duplex (FDD) RF front-end transceivers, is presented. In this technique, the front-end SAW filter is replaced by an active on-chip bandpass filter. The proposed design covers all the UMTS bands as it can be controlled by switches to select the desired band of operation. The filtering technique is based on using a bandpass sink filter to selectively filter the transmitted leakage before the downconversion mixer, while not affecting the desired signal gain. The proposed circuit achieves (57 dB to 62 dB) of signal-to-leakage ratio for different UMTS bands. Designed in 0.13μm CMOS process, the proposed technique improve the IIP2 by 7 dB. However, the noise figure (NF) is degraded by 1.5 dB. The sink filter draws 4.8 mA current from 1.6 V supply.
Keywords :
3G mobile communication; CMOS integrated circuits; active filters; band-pass filters; interference suppression; radio transceivers; radiofrequency filters; radiofrequency interference; surface acoustic wave filters; CMOS process; FDD RF front-end transceiver; IIP2 improvement; TX-leakage suppression; UMTS multiband design; active on-chip bandpass sink filter; current 4.8 mA; downconversion mixer; frequency division duplex; front-end SAW filter; signal-to-leakage ratio; size 0.13 mum; voltage 1.6 V; 3G mobile communication; Gain; Impedance; Matched filters; Mixers; Receivers; CMOS integrated circuit; Direct conversion receivers (DCRs); SAW-less; folded cascode op_amp; passive mixer;
Conference_Titel :
Microelectronics (ICM), 2014 26th International Conference on
DOI :
10.1109/ICM.2014.7071838