Title :
Memristor in digital logic circuit: Fabrication and proof of concept
Author :
Khairir, N.S. ; Sharin, N.F. ; Dzulkifli, M. ; Halim, I.S.A. ; Hassan, S.L. ; Bakar, R.A. ; Abdullah, W.F.H. ; Herman, S.H.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA Malaysia, Shah Alam, Malaysia
Abstract :
This project presents the fabrication and characterization of a memristor and its implementation in digital logic. The memristor was fabricated using TiO2 thin film using sol-gel spin coating technique sandwiched in between a Pt top electrode and a conductive ITO substrate to form the metal-insulator-metal (MIM) configuration. It was found that the fabricated device showed the pinch-hysteresis loop dedicated for a memristor with the RON and ROFF were calculated to be 1.55 MΩ and 1.58 MΩ respectively. Functionality testing was done for current-voltage (I-V) characteristics and switching test.
Keywords :
MIM devices; indium compounds; logic circuits; memristors; platinum; sol-gel processing; spin coating; tin compounds; titanium compounds; I-V characteristics; ITO; MIM configuration; Pt; TiO2; conductive substrate; current-voltage characteristics; digital logic circuit; functionality testing; memristor; metal-insulator-metal configuration; pinch-hysteresis loop; proof of concept; resistance 1.55 Mohm; resistance 1.58 Mohm; sol-gel spin coating technique; switching test; top electrode; Current measurement; Data models; Light emitting diodes; Memristors; Resistance; Switches; Switching circuits; Digital Logic; Memristor; Nanotechnology; TiO2;
Conference_Titel :
Research and Development (SCOReD), 2014 IEEE Student Conference on
Print_ISBN :
978-1-4799-6427-7
DOI :
10.1109/SCORED.2014.7072990
