DocumentCode :
358262
Title :
Energy-efficient 32×32-bit multiplier in tunable near-zero threshold CMOS
Author :
Svilan, Vjekoslav ; Matsui, Masataka ; Burr, James B.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
fYear :
2000
fDate :
2000
Firstpage :
268
Lastpage :
272
Abstract :
An 80,000 transistor, low swing, 32×32-bit multiplier was fabricated in a standard 0.35 μm, Vth=0.5 V CMOS process and in a 0.35 μm, back-bias tunable, near-zero Vth process. While standard CMOS at Vdd=3.3 V runs at 136 MHz, the same performance can be achieved in the low-Vth version at Vdd=1.3 V, resulting in more than 5 times lower power. Similar power reductions are obtained for frequencies down to 10 MHz. In addition, the low-Vth version is able to run at 188 MHz, which is 38% faster than standard CMOS.
Keywords :
CMOS logic circuits; digital arithmetic; high-speed integrated circuits; low-power electronics; multiplying circuits; 0.35 micron; 0.5 V; 1.3 V; 136 to 188 MHz; 32 bit; back-bias tunable process; energy-efficient multiplier; low power operation; low-threshold voltage version; power reduction; tunable near-zero threshold CMOS; Adders; CMOS process; CMOS technology; Energy efficiency; MOS devices; Permission; Power engineering and energy; Systems engineering and theory; Threshold voltage; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design, 2000. ISLPED '00. Proceedings of the 2000 International Symposium on
Print_ISBN :
1-58113-190-9
Type :
conf
DOI :
10.1109/LPE.2000.155297
Filename :
876801
Link To Document :
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