• DocumentCode
    358279
  • Title

    Electrical breakdown characteristics of electroformed copper electrodes in vacuum

  • Author

    Kobayashi, S. ; Sekikawa, K. ; Shibusawa, M. ; Saito, Y. ; Tajiri, K. ; Kabeya, Z.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Saitama Univ., Urawa, Japan
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    41
  • Abstract
    The effects of copper deposits produced by three kinds of electroforming techniques on the breakdown characteristics in vacuum were compared. The electroforming was performed in (i) an acid sulfate bath with brighteners, (ii) a pyrophosphate bath, and (iii) an acid copper sulfate bath with periodic reverse electrolysis and electropolishing. Vacuum degassed oxygen-free copper was used as the substrate material. Electrical breakdown characteristics measured by repetitive breakdowns by applying impulse voltages revealed that the breakdown fields at the first application of voltage in vacuum were 13.4, 10.0, and 40.8 MV/m for the electrodes processed in the first, second and third baths, respectively. In addition an excellent conditioning effect was achieved without in situ electrode surface cleaning
  • Keywords
    copper; electrodes; electroforming; electrolytic polishing; vacuum breakdown; Cu; acid copper sulfate bath; acid sulfate bath; breakdown characteristics; breakdown fields; brighteners; conditioning effect; copper deposits; electrical breakdown characteristics; electroformed copper electrodes; electropolishing; impulse voltages; periodic reverse electrolysis; pyrophosphate bath; repetitive breakdowns; substrate material; vacuum breakdown; vacuum degassed oxygen-free copper; Additives; Breakdown voltage; Conductivity; Copper; Electric breakdown; Electrodes; Impurities; Surface cleaning; Surface discharges; Vacuum breakdown;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Discharges and Electrical Insulation in Vacuum, 2000. Proceedings. ISDEIV. XIXth International Symposium on
  • Conference_Location
    Xi´an
  • Print_ISBN
    0-7803-5791-4
  • Type

    conf

  • DOI
    10.1109/DEIV.2000.877247
  • Filename
    877247