DocumentCode :
3584285
Title :
Silicon detector system for high rate EXAFS application
Author :
Pullia, A. ; Kraner, H.W. ; Siddons, D.P. ; Furenlid, L.R. ; Bertuccio, G.
Author_Institution :
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
Volume :
1
fYear :
1994
Firstpage :
463
Abstract :
A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35°C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35°C. At room temperature (25°C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications
Keywords :
EXAFS; X-ray detection; X-ray spectrometers; silicon radiation detectors; -35 to 25 C; 230 eV; 350 to 380 eV; EXAFS; Peltier cells; Si; X-ray spectroscopic measurements; energy resolution; extended X-ray absorption fine structure applications; multichannel silicon pad detector; reverse currents; shot noise contribution; Cooling; Electromagnetic wave absorption; Electrons; Energy measurement; Energy resolution; Silicon; Spectroscopy; Temperature; X-ray detection; X-ray detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1994., 1994 IEEE Conference Record
Print_ISBN :
0-7803-2544-3
Type :
conf
DOI :
10.1109/NSSMIC.1994.474340
Filename :
474340
Link To Document :
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