Experimental study on the EMI and switching time evolution of IGBT devices after operating aging tests

Author

Tlig, Mohamed ; Ben Hadj Slama, Jaleleddine ; Belaid, M.A.

Author_Institution

Nat. Eng. Sch. of Sousse, Univ. of Sousse, Technopole of Sousse, Tunisia

fYear

2014

Firstpage

1

Lastpage

5

Abstract

The IGBT is a critical device in the static converters, it is important to assess its reliability. In this paper, we investigate the accelerated aging effect on the conducted EMI (ElectroMagnetic Interferences) evolution in the N Chanel IGBTs. We propose a new aging method applied to the IGBT switching in the buck converter circuit (chopper series type), while applying a high current, in order to achieve a junction temperature (Tj) exceeds the highest maximum value specified by the manufacturer. The conducted EMI evolution is examined and presented before and after aging tests. The measurement results show that the obtained variations after aging tests are only on the conducted EMI amplitudes.

Keywords

ageing; choppers (circuits); electromagnetic interference; insulated gate bipolar transistors; life testing; power convertors; power semiconductor switches; semiconductor device testing; EMI; IGBT device reliability; N-Chanel IGBT; accelerated aging; aging tests; buck converter circuit; chopper series type circuit; electromagnetic interference evolution; junction temperature; switching time evolution; Accelerated aging; Electromagnetic interference; Insulated gate bipolar transistors; Junctions; Switching circuits; Temperature measurement; Aging; Common mode; EMI; IGBT; fall time; rise time;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Sciences and Technologies in Maghreb (CISTEM), 2014 International Conference on

Type

conf

DOI

10.1109/CISTEM.2014.7076991

Filename

7076991