Analysis and modeling of the magnetic near fields emited by an IGBT and by a power diode generic radiating model for active components

Author

Labiedh, Walid ; Ben Hadj Slama, Jaleleddine

Author_Institution

ENISo, Univ. of Sousse, Sousse, Tunisia

fYear

2014

Firstpage

1

Lastpage

6

Abstract

In this paper, we present the modeling of radiating emissions of an IGBT and of a power diode. Firstly, we have introduced the technique of measuring the magnetic near field. Secondly, we have studied the magnetic field radiated above an IGBT and the modeling method. The latter is an electromagnetic inverse method based on genetic algorithms. We have applied our method to find an equivalent radiating model of an IGBT. Another model has been developed for a power diode. The models for the two components have been validated. A generic model for the active components has been finally proposed at the end of the paper.

Keywords

genetic algorithms; insulated gate bipolar transistors; inverse problems; magnetic fields; power semiconductor diodes; semiconductor device models; IGBT; electromagnetic inverse method; equivalent radiating model; genetic algorithms; magnetic near field; power diode; radiating emissions modeling; Frequency measurement; Insulated gate bipolar transistors; Integrated circuit modeling; Magnetic field measurement; Magnetic fields; Magnetic resonance imaging; Semiconductor device modeling; Diode; IGBT; Magnetic near field; radiating model;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Sciences and Technologies in Maghreb (CISTEM), 2014 International Conference on

Type

conf

DOI

10.1109/CISTEM.2014.7076992

Filename

7076992