Title :
Performance evaluation of deep sub-micron, fully-depleted silicon-on-insulator (FD-SOI) transistors at low temperatures
Author :
Yuan, J. ; Patel, J.U. ; Vandooren, A.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The performance of 0.25, 0.3 and 0.35 μm fully-depleted SOI transistors is characterized between 77 and 300 K. The behavior of device parameters such as drain current, mobility, transconductance, threshold voltage, subthreshold slope, and Early voltage is analyzed. The suitability of sub-micron FD-SOI devices is examined for low temperature operation as encountered in deep space exploration missions. The results indicate significant performance improvements with decreasing temperature down to 100 K. A second effect dominates below this temperature, thus decreasing mobility and leading to other parameter degradations below 100 K
Keywords :
MOSFET; carrier mobility; semiconductor device measurement; semiconductor technology; silicon-on-insulator; space vehicle electronics; 0.25 mum; 0.3 mum; 0.35 mum; 100 K; 77 to 300 K; Early voltage; below 100 K; deep space exploration missions; deep sub-micron SOI transistors; down to 100 K; drain current; fully-depleted SOI transistors; low temperature operation; mobility; performance improvements; subthreshold slope; threshold voltage; transconductance; Laboratories; Mars; Semiconductor device measurement; Semiconductor films; Silicon on insulator technology; Space exploration; Temperature measurement; Temperature sensors; Threshold voltage; Transconductance;
Conference_Titel :
Aerospace Conference Proceedings, 2000 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-5846-5
DOI :
10.1109/AERO.2000.878516
