Title :
Metalorganic vapor phase epitaxy for specialty semiconductor devices
Author :
Woelk, E. ; Bremser, M. ; Heuken, M. ; Juergensen, H.
Author_Institution :
AIXTRON Inc., Buffalo Grove, IL, USA
Abstract :
In this contribution we will present the technique of MOVPE and how it is used today to grow specialty materials and structures that are being investigated for application in future space missions. The material growth is highly developed and the work on devices is going on. We present the device concepts that can be realized using MOVPE. Among these are solar blind AlN UV detectors, high temperature FETs and bipolar transistors from GaN and SiC, low temperature FETs and bipolar transistors from GaAs, InP, GaInP, long wavelength lasers from Sb-compounds, to name but a few. We present the current trends in the production of the underlying film structures
Keywords :
III-V semiconductors; MOCVD; antimony; bipolar transistors; field effect transistors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor technology; space vehicle electronics; ultraviolet detectors; AIXTRON; AlN; GaAs; GaInP; GaN; InP; MOVPE; Sb; Sb-compounds; SiC; bipolar transistors; film structures; high temperature FETs; long wavelength lasers; low temperature FET; material grow; metalorganic vapor phase epitaxy; solar blind AlN UV detectors; space missions; Bipolar transistors; Epitaxial growth; Epitaxial layers; FETs; Gallium arsenide; Gallium nitride; Semiconductor materials; Silicon carbide; Space missions; Temperature;
Conference_Titel :
Aerospace Conference Proceedings, 2000 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-5846-5
DOI :
10.1109/AERO.2000.878519
