DocumentCode :
3586290
Title :
A U-band VCO in 65nm CMOS with 0.44dBm output power
Author :
Jongsuk Lee ; Sangho Shin ; Yong Moon
Author_Institution :
Sch. of Electron. Eng., Soongsil Univ., Seoul, South Korea
fYear :
2014
Firstpage :
86
Lastpage :
87
Abstract :
A high output power VCO (voltage controlled oscillator) in U-band is implemented using 65nm CMOS process. The proposed VCO uses MTM(meta-material) technique with transmission line to increase output voltage swing and overcome the limitation of the CMOS technologies. Two varactor banks widen frequency tuning range upto 5%. The VCO operates at 51.55~54.18GHz and the measured phase noise is -100.67dBc/Hz at 10MHz offset. The chip area is 0.16×0.16mm2 and the output power is 0.44dBm. The power consumption is 33.6mW with 1.2V supply voltage. The measured FOMP is -181dBc/Hz.
Keywords :
CMOS integrated circuits; field effect MIMIC; low-power electronics; metamaterials; millimetre wave oscillators; phase noise; varactors; voltage-controlled oscillators; CMOS process; MTM technique; U-band VCO; frequency 51.55 GHz to 54.18 GHz; meta-material technique; phase noise; power 33.6 mW; power consumption; size 65 nm; transmission line; varactor banks; voltage 1.2 V; voltage controlled oscillator; CMOS integrated circuits; Frequency measurement; Loss measurement; MOS devices; Voltage-controlled oscillators; CMOS; U-band; transformer; transmission line; voltage controlled oscillator (VCO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2014 International
Type :
conf
DOI :
10.1109/ISOCC.2014.7087574
Filename :
7087574
Link To Document :
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